Search results for "electrical resistivity"
showing 10 items of 357 documents
Intégration d’une prospection géophysique dans la démarche de cartographie des sols : Exemple de l’unité expérimentale d’Epoisses
2016
Intégration d’une prospection géophysique dans la démarche de cartographie des sols : Exemple de l’unité expérimentale d’Epoisses. 13. Journées d'Etudes des Sols
Low intrinsic carrier density LSMO/Alq3/AlOx/Co organic spintronic devices
2018
The understanding of spin injection and transport in organic spintronic devices is still incomplete, with some experiments showing magnetoresistance and others not detecting it. We have investigated the transport properties of a large number of tris-(8-hydroxyquinoline)aluminum-based organic spintronic devices with an electrical resistance greater than 5 MΩ that did not show magnetoresistance. Their transport properties could be described satisfactorily by known models for organic semiconductors. At high voltages (>2 V), the results followed the model of space charge limited current with a Poole-Frenkel mobility. At low voltages (∼0.1 V), that are those at which t…
Magnetic and structural study of (Fe1−Co )62 Nb8B30 bulk amorphous alloys
2004
Abstract The electric and magnetic properties of rapidly quenched (Fe 1− x Co x ) 62 Nb 8 B 30 bulk metallic glasses were studied with x =0, 0.33 and 0.50. The Curie temperature in the amorphous state was found to be about 245 °C for the Co-free alloy, 290 °C for x =0.33 and 201 °C for x =0.50, while the crystallization temperature is varying within 15° only around 600 °C. The change in T C correlates with the change in Mossbauer parameters. An interesting flattening effect of annealing on the hysteresis loop was observed which increases with the Co content. The resistivity could not be improved above 152 μΩ cm, which limits the high frequency applications of these alloys.
3D modeling of doping from the atmosphere in floating zone silicon crystal growth
2017
Abstract Three-dimensional numerical simulations of the inert gas flow, melt flow and dopant transport in both phases are carried out for silicon single crystal growth using the floating zone method. The mathematical model allows to predict the cooling heat flux density at silicon surfaces and realistically describes the dopant transport in case of doping from the atmosphere. A very good agreement with experiment is obtained for the radial resistivity variation profiles by taking into account the temperature dependence of chemical reaction processes at the free surface.
Mechanical, thermal and electrical properties of monolayer and bilayer graded Al/SiC/rice husk ash (RHA) composite
2017
Abstract The mechanical, electrical and thermal properties as well as thermal expansion of Al/SiC/RHA (rice husk ash) monolayer and bilayer composite have been studied using the Taguchi method and analysis of variance (ANOVA). The parameter that most significantly affects the modulus of elasticity of Al/SiC/RHA bilayer composites is processing time, with contribution percentages of 68 and 27% calculated from stress-strain graphs and ultrasonic method, respectively. However, the factor which mostly affects bending strength, CTE value and electrical resistivity of composites is process temperature with contribution percentages of 32, 28, and 22%, respectively. The projected values for modulus…
The influence of topological phase transition on the superfluid density of overdoped copper oxides
2017
We show that a topological quantum phase transition, generating flat bands and altering Fermi surface topology, is a primary reason for the exotic behavior of the overdoped high-temperature superconductors represented by $\rm La_{2-x}Sr_xCuO_4$, whose superconductivity features differ from what is described by the classical Bardeen-Cooper-Schrieffer theory [J.I. Bo\^zovi\'c, X. He, J. Wu, and A. T. Bollinger, Nature 536, 309 (2016)]. We demonstrate that 1) at temperature $T=0$, the superfluid density $n_s$ turns out to be considerably smaller than the total electron density; 2) the critical temperature $T_c$ is controlled by $n_s$ rather than by doping, and is a linear function of the $n_s$…
Si Donor Incorporation in GaN Nanowires
2015
With increasing interest in GaN based devices, the control and evaluation of doping are becoming more and more important. We have studied the structural and electrical properties of a series of Si-doped GaN nanowires (NWs) grown by molecular beam epitaxy (MBE) with a typical dimension of 2-3 μm in length and 20-200 nm in radius. In particular, high resolution energy dispersive X-ray spectroscopy (EDX) has illustrated a higher Si incorporation in NWs than that in two-dimensional (2D) layers and Si segregation at the edge of the NW with the highest doping. Moreover, direct transport measurements on single NWs have shown a controlled doping with resistivity from 10(2) to 10(-3) Ω·cm, and a car…
Incommensurate nature of the multilayered molecular ferromagnetic metals based on bis(ethylenedithio)tetrathiafulvalene and bimetallic oxalate comple…
2004
The salt [ET]x[MnRh(ox)(3)].CH(2)Cl(2) (x = 2.526(1)) has been obtained and characterized. This paramagnetic metal is essentially isostructural to the ferromagnetic metal [ET]y[MnCr(ox)(3)].CH(2)Cl(2) (y approximately equal to 3) and provides a definite answer on the origin of the structural disorder present on such systems. As in the ferromagnetic analogue, this material shows high electrical conductivity at room temperature (13 S.cm(-1)) and metallic behavior.
Sensitivity Analysis Of Multi-Electrode Arrays For Characterizing The Non-Saturated Zone In Groundwater Vulnerability Assessment
2009
The near-surface environment acts as a filter and buffer for contaminants introduced from the surface by anthropogenic activities. For this reason there is a great need to improve our understanding of the shallow subsurface taking into account the increasing demand for vulnerability maps which illustrates the exposure of aquifers against pollution. These maps are designed to show areas of greatest potential for groundwater contamination on the basis of local subsurface conditions. A shallow, unconfined sand-and-gravel aquifer is highly vulnerable to pollutants because rapid recharge gives little time to contaminants to degrade naturally or be adsorbed before reaching the aquifer. Conversely…
Investigation of diffusion and electromigration of hydrogen in palladium and PdAg alloy
1999
Abstract Diffusion and electromigration of hydrogen in PdH 0.1 , Pd 77 Ag 23 H 0.1 and Pd 50 Ag 50 H 0.1 alloy were measured by means of resistivity method. It is known that hydrogen migrates towards the cathode within the temperature range of 300–473 K in the PdH 0.1 and Pd 77 Ag 23 H 0.1 system. In Pd 50 Ag 50 H 0.1 , hydrogen migrates towards the cathode below 400 K, but towards the anode at higher temperatures. Its effective valency increases together with temperature. At the same time it satisfies the linear dependence on inverse specific resistance ρ : Z eff = Z i +( k / ρ ). The constants Z i and k have the following values: (1.05±0.01) and −(3.81±0.04)×10 −8 Ω m for hydrogen in PdH …